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 MP03 XXX 130 Series
MP03 XXX 130 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces December 1998 version, DS4480-3.0 DS4480-4.0 January 2000
FEATURES s Dual Device Module s Electrically Isolated Package s Pressure Contact Construction s International Standard Footprint s Alumina (non-toxic) Isolation Medium APPLICATIONS s Motor Control s Controlled Rectifier Bridges s Heater Control s AC Phase Control VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM 2000 1800 1600 Conditions HBN HBP Code HBT
KEY PARAMETERS 2000V VDRM ITSM 4000A IT(AV)(per arm) 134A 2500V Visol CIRCUIT OPTIONS
Circuit
PACKAGE OUTLINE
MP03/130-20 MP03/130-18 MP03/130-16
Tvj = 125oC IDRM = IRRM = 30mA VDSM & VRSM = VDRM & VRRM + 100V respectively
Lower voltage grades available. For full description of part number see "Ordering Instructions" on page 3.
Module type code: MP03. See Package Details for futher information.
CURRENT RATINGS - PER ARM
Symbol Parameter Conditions Tcase = 75oC Tcase = 85oC IT(AV) Mean on-state current Halfwave, resistive load Theatsink = 75oC Theatsink = 85oC IT(RMS) RMS value Tcase = 75oC Max. 134 112 114 95 210 Units A A A A A
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MP03 XXX 130 Series
SURGE RATINGS - PER ARM
Symbol ITSM Parameter Surge (non-repetitive) on-state current Conditions 10ms half sine; VR = 0 Tj = 125oC VR = 50% VRRM 10ms half sine; VR = 0 Tj = 125oC VR = 50% VRRM Max. 4000 3200 80000 51200 Units A A A2s A 2s
I 2t
I2t for fusing
THERMAL & MECHANICAL RATINGS
Symbol Parameter dc Rth(j-c) Thermal resistance - junction to case per Thyristor or Diode halfwave 3 phase Rth(c-hs) Tvj Tsto Visol Thermal resistance - case to heatsink per Thyristor or Diode Virtual junction temperature Storage temperature range Isolation voltage Commoned terminals to base plate AC RMS, 1min, 50Hz Mounting torque = 5Nm with mounting compound Conditions Max. 0.21 0.22 0.23 0.05 125 -40 to 125 2.5 Units
o
C/W C/W C/W C/W
o
o
o
o
C C
o
kV
DYNAMIC CHARACTERISTICS
Symbol VTM IRRM/IDRM dV/dt Parameter On-state voltage Peak reverse and off-state current Linear rate of rise of off-state voltage Conditions At 450A, Tcase = 25oC - See Note 1 At VRRM/VDRM, Tj = 125oC To 60% VDRM Tj = 125oC From 67% VDRM to 400A Repetitive 50Hz Gate source 20V, 20 Rise time 0.5s, Tj =125oC At Tvj = 125oC - See Note 1 At Tvj = 125oC - See Note 1 Max. 1.90 30 200* 100 Units V mA V/s A/s
dI/dt VT(TO) rT
Rate of rise of on-state current Threshold voltage On-state slope resistance
1.25 1.33
V m
* Higher dV/dt values available, contact factory for particular requirements. Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor.
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GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC Anode positive with respect to cathode Anode negative with respect to cathode Typ. Max. 3.0 200 0.2 30 0.25 5.0 4 16 3 Units V mA V V V V A W W
ORDERING INSTRUCTIONS
Part number is made up as follows: Examples: MP03 HBP130-16 MP03 HBN130-20 MP03 HBT130-16
MP03 HBT 130 - 18
MP 03 HBT 130 18 = Pressure contact module = Outline type = Circuit configuration code (see "circuit options" - front page) = Nominal average current rating at Tcase = 75oC = VRRM/100
Note: Diode ratings and characteristics are comparable with SCR in types HBP or HBN. Types HBP or HBN can also be supplied with diode polarity reversed, to special order.
MOUNTING RECOMMENDATIONS
Adequate heatsinking is required to maintain the base temperature at 75oC if full rated current is to be achieved. Power dissipation may be calculated by use of VT(TO) and rT information in accordance with standard formulae. We can provide assistance with calculations or choice of heatsink if required. The heatsink surface must be smooth and flat; a surface finish of N6 (32in) and a flatness within 0.05mm (0.002") are recommended. Immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, Scotch Brite or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. Care should be taken to ensure no foreign particles remain. An even coating of thermal compound (eg. Unial) should be applied to both the heatsink and module mounting surfaces. This should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance. After application of thermal compound, place the module squarely over the mounting holes, (or 'T' slots) in the heatsink. Using a torque wrench, slowly tighten the recommended fixing bolts at each end, rotating each in turn no more than 1/4 of a revolution at a time. Continue until the required torque of 5Nm (44lb.ins) is reached at both ends. It is not acceptable to fully tighten one fixing bolt before starting to tighten the others. Such action may DAMAGE the module.
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MP03 XXX 130 Series
CURVES
1000
Instantaneous on-state current IT - (A)
800
600
Tj = 125C 400
200
0
0
1.0 2.0 3.0 Instantaneous on-state voltage VT - (V)
4.0
Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1
50
P
G M
=
Gate voltage VG - (V)
10
16
W
Tj = 25C
Tj = -40C
Tj = 125C 1
0.1 0.01
0.1 1 Gate current IG - (A)
Fig. 2 Gate trigger characteristics
10
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MP03 XXX 130 Series
0.3 Rth(j-hs)
Thermal Impedance - (C/W)
Rth(j-c) 0.2
0.1
0 0.001
0.010
0.100 Time - (s)
1.0
10
100
Fig. 3 Transient thermal impedance (DC) - (Thyristor or diode)
Peak half sine wave on-state current - (kA)
10 9 8 7 6 5 4 3 2 1 0 1 ms 10 1 2 3 45 I2t 60 50 40 30 20 10 0 50
I2t value - A2s x 103
cycles at 50Hz Duration
Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% VRRM, Tcase = 125C (Thyristor or diode)
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MP03 XXX 130 Series
400 350 300 250 200 150 100 50 0 60 30 120 90
On-state power loss per device - (W)
180
0
25
50 75 100 Mean on-state current - (A)
125
150
Fig. 5 On-state power loss per arm vs forward current at various conduction angles, sine wave, 50/60Hz
400 350 300 250 120 200 60 150 100 50 0 30 90 180 d.c.
On-state power loss per device - (W)
0
25
50 75 100 Mean on-state current - (A)
125
150
Fig. 6 On-state power loss per arm vs forward current at various conduction angles, square wave, 50/60Hz
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MP03 XXX 130 Series
Maximum permissible case temperature - (C)
140 120 100 80 60 40 20 30 0 0 25 60 90 120 125 180 150 50 75 100 Mean on-state current - (A)
Fig. 7 Maximum permissible case temperature vs forward current per arm at various conduction angles, sine wave, 50/60Hz
Maximum permissible case temperature - (C)
140 120 100 80 60 40 20 30 0 0 25 60 90 120 125 180 d.c. 150
50 75 100 Mean on-state current - (A)
Fig. 8 Maximum permissible case temperature vs forward current per arm at various conduction angles, square wave, 50/60Hz
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MP03 XXX 130 Series
600 500
Total power - (W)
0.12 0.15
0.10 0.08 0.04 0.02 Rth(hs-a) C/W
R - Load
400 0.20 300 200 100 0 20 0 40 60 80 100 0 Maximum ambient temperature - (C) 0.30 0.40
L - Load
50 100 150 D.C. output current - (A)
200
Fig. 9 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance. (Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
600 500
Total power - (W)
0.10 0.15 0.12 0.08 0.04 0.02 Rth(hs-a) C/W 0.20
R & L- Load
400 300 200 100 0
0.30 0.40
20 0 40 60 80 100 0 Maximum ambient temperature - (C)
50 100 150 D.C. output current - (A)
200
Fig. 9 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance. (Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
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MP03 XXX 130 Series
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
42.5 O5.5
35
28.5 5 K2 G2
5
50 38
G1 K1 80 2 3 2.8x0.8
3x M8
1
52
32
92
Recommended fixings for mounting: Recommended mounting torque: Recommended torque for electrical connections: Maximum torque for electrical connections: Nominal weight: 950g
M5 socket head cap screws. 5Nm (44lb.ins) 8Nm (70lb.ins) 9Nm (80lb.ins)
Module outline type code: MP03
CIRCUIT CONFIGURATIONS
G1K1 1 2
HBT
K2 G2 3
G1K1 1 2
HBP
3
K2 G2 1 2
HBN
3
5
6.5
18
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MP03 XXX 130 Series
ASSOCIATED PUBLICATIONS
Title Calculating the junction temperature or power semiconductors Thyristor and diode measurement with a multi-meter Use of VTO, rT on-state characteristic Application Note Number AN4506 AN4853 AN5001
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
HEATSINKS
Power Assembly has it's own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2000 Publication No. DS4480-4 Issue No. 4.0 January 2000 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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